Справочник по IGBT транзисторам. Datasheet на транзистор FGA25N120ANTD


ТранзисторFGA25N120ANTD
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A50.000
Ic max, A90.0
P, W312.000
t min,C-55
t max,C150
Rth,C0.40
Vce sat. V2.00
Cies,pF3700.0
Coes,pF130.0
Cres,pF80.0
t on, nS50.00
t rise, nS60.00
t off, nS190.00
t fall, nS100.00
Eon,mJ4.100
Eoff,mJ0.960
Etot,mJ5.060
Qg, nC200.0
Qgc,nC15.0
Qge,nC100.0
t rr,nS235.0
Qrr, nC3130.00
Возможные корпусаTO-3PN
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGA25N120ANTD Datasheet FairChild (Samsung)