Справочник по IGBT транзисторам. Datasheet на транзистор FGH60N60UFD


ТранзисторFGH60N60UFD
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A120.000
Ic max, A180.0
P, W298.000
t min,C-55
t max,C150
Rth,C0.33
Vce sat. V1.90
Cies,pF2855.0
Coes,pF325.0
Cres,pF110.0
t on, nS23.00
t rise, nS58.00
t off, nS130.00
t fall, nS40.00
Eon,mJ1.810
Eoff,mJ0.810
Etot,mJ2.620
Qg, nC188.0
Qgc,nC21.0
Qge,nC97.0
t rr,nS47.0
Qrr, nC83.00
Возможные корпусаTO-247
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGH60N60UFD Datasheet FairChild (Samsung)