Справочник по IGBT транзисторам. Datasheet на транзистор FGH30N60LSD


ТранзисторFGH30N60LSD
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A60.000
Ic max, A90.0
P, W480.000
t min,C-55
t max,C150
Rth,C0.26
Vce sat. V1.10
Cies,pF3550.0
Coes,pF245.0
Cres,pF90.0
t on, nS18.00
t rise, nS46.00
t off, nS250.00
t fall, nS1300.00
Eon,mJ1.100
Eoff,mJ21.000
Etot,mJ
Qg, nC225.0
Qgc,nC30.0
Qge,nC105.0
t rr,nS35.0
Qrr, nC27.50
Возможные корпусаTO-247
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGH30N60LSD Datasheet FairChild (Samsung)