Справочник по IGBT транзисторам. Datasheet на транзистор FGH25N120FTDS


ТранзисторFGH25N120FTDS
ТипSingle
Vce, V1200.0
Vge,V25.0
Ic, A50.000
Ic max, A75.0
P, W313.000
t min,C-55
t max,C150
Rth,C0.40
Vce sat. V1.60
Cies,pF4090.0
Coes,pF135.0
Cres,pF75.0
t on, nS26.00
t rise, nS41.00
t off, nS151.00
t fall, nS102.00
Eon,mJ1.420
Eoff,mJ1.160
Etot,mJ2.560
Qg, nC169.0
Qgc,nC33.0
Qge,nC78.0
t rr,nS411.0
Qrr, nC1100.00
Возможные корпусаTO-3PN
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
FGH25N120FTDS Datasheet FairChild (Samsung)