Справочник по IGBT транзисторам. Datasheet на транзистор SGP10N60RUFD


ТранзисторSGP10N60RUFD
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A16.000
Ic max, A30.0
P, W75.000
t min,C-55
t max,C150
Rth,C1.60
Vce sat. V2.20
Cies,pF660.0
Coes,pF115.0
Cres,pF25.0
t on, nS15.00
t rise, nS30.00
t off, nS36.00
t fall, nS158.00
Eon,mJ0.141
Eoff,mJ0.215
Etot,mJ0.356
Qg, nC30.0
Qgc,nC8.0
Qge,nC5.0
t rr,nS42.0
Qrr, nC80.00
Возможные корпусаTO-220
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
SGP10N60RUFD Datasheet FairChild (Samsung)