Справочник по IGBT транзисторам. Datasheet на транзистор HGTP7N60C3D


ТранзисторHGTP7N60C3D
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A14.000
Ic max, A56.0
P, W60.000
t min,C-40
t max,C150
Rth,C2.10
Vce sat. V1.60
Cies,pF
Coes,pF
Cres,pF
t on, nS8.50
t rise, nS11.50
t off, nS350.00
t fall, nS140.00
Eon,mJ0.165
Eoff,mJ0.600
Etot,mJ
Qg, nC23.0
Qgc,nC
Qge,nC
t rr,nS25.0
Qrr, nC
Возможные корпусаTO-220AB
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
HGTP7N60C3D Datasheet FairChild (Samsung)