Справочник по IGBT транзисторам. Datasheet на транзистор HGTP7N60A4


ТранзисторHGTP7N60A4
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A34.000
Ic max, A56.0
P, W125.000
t min,C-55
t max,C150
Rth,C1.00
Vce sat. V1.90
Cies,pF
Coes,pF
Cres,pF
t on, nS11.00
t rise, nS11.00
t off, nS100.00
t fall, nS45.00
Eon,mJ0.055
Eoff,mJ0.060
Etot,mJ
Qg, nC48.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-220
Производитель
  • FairChild (Samsung) (http://www.fairchildsemi.com)
HGTP7N60A4 Datasheet FairChild (Samsung)