Справочник по IGBT транзисторам. Datasheet на транзистор IKB10N60T


ТранзисторIKB10N60T
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A20.000
Ic max, A30.0
P, W110.000
t min,C-40
t max,C175
Rth,C1.35
Vce sat. V1.50
Cies,pF551.0
Coes,pF40.0
Cres,pF17.0
t on, nS12.00
t rise, nS8.00
t off, nS215.00
t fall, nS38.00
Eon,mJ0.160
Eoff,mJ0.270
Etot,mJ0.430
Qg, nC62.0
Qgc,nC
Qge,nC
t rr,nS200.0
Qrr, nC920.00
Возможные корпусаTO-263
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IKB10N60T Datasheet Infineon (Siemens)