Справочник по IGBT транзисторам. Datasheet на транзистор SIGC08T60S


ТранзисторSIGC08T60S
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A15.000
Ic max, A45.0
P, W
t min,C-40
t max,C150
Rth,C
Vce sat. V1.50
Cies,pF860.0
Coes,pF55.0
Cres,pF24.0
t on, nS
t rise, nS15.00
t off, nS
t fall, nS79.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаChip
Производитель
  • Infineon (Siemens) (http://infineon.com)
SIGC08T60S Datasheet Infineon (Siemens)