Справочник по IGBT транзисторам. Datasheet на транзистор IKB01N120H2


ТранзисторIKB01N120H2
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A3.200
Ic max, A3.5
P, W28.000
t min,C-40
t max,C150
Rth,C4.50
Vce sat. V2.20
Cies,pF91.6
Coes,pF9.8
Cres,pF3.4
t on, nS13.00
t rise, nS6.30
t off, nS370.00
t fall, nS28.00
Eon,mJ0.080
Eoff,mJ0.060
Etot,mJ0.140
Qg, nC8.6
Qgc,nC
Qge,nC
t rr,nS83.0
Qrr, nC89.00
Возможные корпусаTO-263
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IKB01N120H2 Datasheet Infineon (Siemens)