Справочник по IGBT транзисторам. Datasheet на транзистор IHW30N100R


ТранзисторIHW30N100R
Тип-
Vce, V1000.0
Vge,V
Ic, A60.000
Ic max, A90.0
P, W412.000
t min,C
t max,C
Rth,C
Vce sat. V1.75
Cies,pF
Coes,pF
Cres,pF
t on, nS
t rise, nS
t off, nS948.00
t fall, nS40.40
Eon,mJ2.860
Eoff,mJ2.860
Etot,mJ
Qg, nC209.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IHW30N100R Datasheet Infineon (Siemens)