Справочник по IGBT транзисторам. Datasheet на транзистор IKD10N60R


ТранзисторIKD10N60R
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A20.000
Ic max, A30.0
P, W150.000
t min,C-40
t max,C175
Rth,C1.00
Vce sat. V1.85
Cies,pF655.0
Coes,pF37.0
Cres,pF22.0
t on, nS14.00
t rise, nS10.00
t off, nS192.00
t fall, nS139.00
Eon,mJ0.210
Eoff,mJ0.380
Etot,mJ0.590
Qg, nC64.0
Qgc,nC
Qge,nC
t rr,nS62.0
Qrr, nC560.00
Возможные корпусаTO-252
Производитель
  • Infineon (Siemens) (http://infineon.com)
IKD10N60R Datasheet Infineon (Siemens)