Справочник по IGBT транзисторам. Datasheet на транзистор IGW25T120


ТранзисторIGW25T120
Тип-
Vce, V1200.0
Vge,V
Ic, A50.000
Ic max, A75.0
P, W190.000
t min,C
t max,C
Rth,C
Vce sat. V2.20
Cies,pF
Coes,pF
Cres,pF
t on, nS50.00
t rise, nS32.00
t off, nS660.00
t fall, nS130.00
Eon,mJ3.000
Eoff,mJ4.000
Etot,mJ
Qg, nC155.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGW25T120 Datasheet Infineon (Siemens)