Справочник по IGBT транзисторам. Datasheet на транзистор IGW60T120


ТранзисторIGW60T120
Тип-
Vce, V1200.0
Vge,V
Ic, A100.000
Ic max, A150.0
P, W375.000
t min,C
t max,C
Rth,C
Vce sat. V2.30
Cies,pF
Coes,pF
Cres,pF
t on, nS50.00
t rise, nS45.00
t off, nS600.00
t fall, nS130.00
Eon,mJ6.400
Eoff,mJ9.400
Etot,mJ
Qg, nC280.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGW60T120 Datasheet Infineon (Siemens)