Справочник по IGBT транзисторам. Datasheet на транзистор IGB30N60T


ТранзисторIGB30N60T
Тип-
Vce, V600.0
Vge,V
Ic, A60.000
Ic max, A90.0
P, W187.000
t min,C
t max,C
Rth,C
Vce sat. V1.50
Cies,pF
Coes,pF
Cres,pF
t on, nS23.00
t rise, nS21.00
t off, nS254.00
t fall, nS46.00
Eon,mJ0.690
Eoff,mJ0.770
Etot,mJ
Qg, nC167.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-263
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGB30N60T Datasheet Infineon (Siemens)