Справочник по IGBT транзисторам. Datasheet на транзистор SGW02N120


ТранзисторSGW02N120
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A6.200
Ic max, A9.6
P, W50.000
t min,C-55
t max,C150
Rth,C2.50
Vce sat. V3.10
Cies,pF205.0
Coes,pF20.0
Cres,pF12.0
t on, nS23.00
t rise, nS16.00
t off, nS260.00
t fall, nS61.00
Eon,mJ0.160
Eoff,mJ0.060
Etot,mJ0.220
Qg, nC11.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
SGW02N120 Datasheet Infineon (Siemens)