Справочник по IGBT транзисторам. Datasheet на транзистор SGD06N60


ТранзисторSGD06N60
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A12.000
Ic max, A24.0
P, W68.000
t min,C-55
t max,C150
Rth,C1.85
Vce sat. V2.00
Cies,pF350.0
Coes,pF38.0
Cres,pF23.0
t on, nS25.00
t rise, nS18.00
t off, nS220.00
t fall, nS54.00
Eon,mJ0.110
Eoff,mJ0.105
Etot,mJ0.215
Qg, nC32.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-252
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
SGD06N60 Datasheet Infineon (Siemens)