Справочник по IGBT транзисторам. Datasheet на транзистор SGW25N120


ТранзисторSGW25N120
ТипSingle
Vce, V1200.0
Vge,V20.0
Ic, A46.000
Ic max, A84.0
P, W313.000
t min,C-55
t max,C150
Rth,C0.40
Vce sat. V3.10
Cies,pF2150.0
Coes,pF160.0
Cres,pF110.0
t on, nS45.00
t rise, nS40.00
t off, nS730.00
t fall, nS30.00
Eon,mJ2.200
Eoff,mJ1.500
Etot,mJ3.700
Qg, nC225.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
SGW25N120 Datasheet Infineon (Siemens)