Справочник по IGBT транзисторам. Datasheet на транзистор IGB01N120H2


ТранзисторIGB01N120H2
Тип-
Vce, V1200.0
Vge,V
Ic, A3.200
Ic max, A3.5
P, W28.000
t min,C
t max,C
Rth,C
Vce sat. V2.50
Cies,pF
Coes,pF
Cres,pF
t on, nS12.00
t rise, nS8.90
t off, nS450.00
t fall, nS43.00
Eon,mJ0.110
Eoff,mJ0.090
Etot,mJ
Qg, nC8.6
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-263
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGB01N120H2 Datasheet Infineon (Siemens)