Справочник по IGBT транзисторам. Datasheet на транзистор SGW30N60HS


ТранзисторSGW30N60HS
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A41.000
Ic max, A112.0
P, W250.000
t min,C-55
t max,C150
Rth,C0.50
Vce sat. V2.80
Cies,pF1500.0
Coes,pF150.0
Cres,pF92.0
t on, nS20.00
t rise, nS21.00
t off, nS250.00
t fall, nS25.00
Eon,mJ0.600
Eoff,mJ0.550
Etot,mJ1.150
Qg, nC141.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
SGW30N60HS Datasheet Infineon (Siemens)