Справочник по IGBT транзисторам. Datasheet на транзистор IGW03N120H2


ТранзисторIGW03N120H2
Тип-
Vce, V1200.0
Vge,V
Ic, A9.600
Ic max, A9.9
P, W62.500
t min,C
t max,C
Rth,C
Vce sat. V2.50
Cies,pF
Coes,pF
Cres,pF
t on, nS9.40
t rise, nS6.70
t off, nS340.00
t fall, nS63.00
Eon,mJ0.220
Eoff,mJ0.260
Etot,mJ
Qg, nC22.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGW03N120H2 Datasheet Infineon (Siemens)