Справочник по IGBT транзисторам. Datasheet на транзистор IGP50N60T


ТранзисторIGP50N60T
Тип-
Vce, V600.0
Vge,V
Ic, A100.000
Ic max, A150.0
P, W333.000
t min,C
t max,C
Rth,C
Vce sat. V1.50
Cies,pF
Coes,pF
Cres,pF
t on, nS26.00
t rise, nS29.00
t off, nS299.00
t fall, nS29.00
Eon,mJ1.200
Eoff,mJ1.400
Etot,mJ
Qg, nC310.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-220
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGP50N60T Datasheet Infineon (Siemens)