Справочник по IGBT транзисторам. Datasheet на транзистор SGP02N60


ТранзисторSGP02N60
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A6.000
Ic max, A12.0
P, W30.000
t min,C-55
t max,C150
Rth,C4.20
Vce sat. V1.90
Cies,pF142.0
Coes,pF18.0
Cres,pF10.0
t on, nS20.00
t rise, nS13.00
t off, nS259.00
t fall, nS52.00
Eon,mJ0.036
Eoff,mJ0.028
Etot,mJ0.064
Qg, nC14.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-220
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
SGP02N60 Datasheet Infineon (Siemens)