Справочник по IGBT транзисторам. Datasheet на транзистор SGP30N60


ТранзисторSGP30N60
Тип-
Vce, V600.0
Vge,V
Ic, A41.000
Ic max, A112.0
P, W250.000
t min,C
t max,C
Rth,C
Vce sat. V2.50
Cies,pF
Coes,pF
Cres,pF
t on, nS44.00
t rise, nS34.00
t off, nS324.00
t fall, nS67.00
Eon,mJ0.980
Eoff,mJ0.920
Etot,mJ
Qg, nC140.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-220
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
SGP30N60 Datasheet Infineon (Siemens)