Справочник по IGBT транзисторам. Datasheet на транзистор IGW25N120H3


ТранзисторIGW25N120H3
Тип-
Vce, V1200.0
Vge,V
Ic, A50.000
Ic max, A100.0
P, W326.000
t min,C
t max,C
Rth,C
Vce sat. V2.05
Cies,pF
Coes,pF
Cres,pF
t on, nS27.00
t rise, nS41.00
t off, nS277.00
t fall, nS17.00
Eon,mJ1.800
Eoff,mJ0.850
Etot,mJ
Qg, nC115.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGW25N120H3 Datasheet Infineon (Siemens)