Справочник по IGBT транзисторам. Datasheet на транзистор IGP30N60H3


ТранзисторIGP30N60H3
Тип-
Vce, V600.0
Vge,V
Ic, A60.000
Ic max, A120.0
P, W187.000
t min,C
t max,C
Rth,C
Vce sat. V1.95
Cies,pF
Coes,pF
Cres,pF
t on, nS18.00
t rise, nS22.00
t off, nS207.00
t fall, nS22.00
Eon,mJ0.730
Eoff,mJ0.440
Etot,mJ
Qg, nC165.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-220
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGP30N60H3 Datasheet Infineon (Siemens)