Справочник по IGBT транзисторам. Datasheet на транзистор IGB30N60H3


ТранзисторIGB30N60H3
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A60.000
Ic max, A120.0
P, W187.000
t min,C-40
t max,C175
Rth,C0.80
Vce sat. V1.95
Cies,pF1630.0
Coes,pF107.0
Cres,pF50.0
t on, nS18.00
t rise, nS22.00
t off, nS207.00
t fall, nS22.00
Eon,mJ0.730
Eoff,mJ0.440
Etot,mJ1.170
Qg, nC165.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-263
Производитель
  • Infineon (Siemens) (http://infineon.com)
IGB30N60H3 Datasheet Infineon (Siemens)