Справочник по IGBT транзисторам. Datasheet на транзистор IGD06N60T


ТранзисторIGD06N60T
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A12.000
Ic max, A18.0
P, W88.000
t min,C-40
t max,C175
Rth,C1.70
Vce sat. V1.50
Cies,pF368.0
Coes,pF28.0
Cres,pF11.0
t on, nS9.00
t rise, nS6.00
t off, nS130.00
t fall, nS58.00
Eon,mJ0.090
Eoff,mJ0.110
Etot,mJ0.200
Qg, nC42.0
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-252
Производитель
  • Infineon (Siemens) (http://infineon.com)
  • Beijing Jingchuan Electronic Company (http://igbt.cn)
IGD06N60T Datasheet Infineon (Siemens)