Справочник по IGBT транзисторам. Datasheet на транзистор RJP6065DPM


ТранзисторRJP6065DPM
ТипSingle
Vce, V630.0
Vge,V30.0
Ic, A40.000
Ic max, A100.0
P, W50.000
t min,C-55
t max,C150
Rth,C2.50
Vce sat. V1.80
Cies,pF1130.0
Coes,pF95.0
Cres,pF10.0
t on, nS40.00
t rise, nS90.00
t off, nS80.00
t fall, nS450.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-3PFM
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJP6065DPM Datasheet Renesas (NEC, Hitachi)