Справочник по IGBT транзисторам. Datasheet на транзистор RJP30H1DPP-M0


ТранзисторRJP30H1DPP-M0
ТипSingle
Vce, V360.0
Vge,V30.0
Ic, A30.000
Ic max, A200.0
P, W20.000
t min,C-55
t max,C150
Rth,C6.25
Vce sat. V1.50
Cies,pF740.0
Coes,pF40.0
Cres,pF17.0
t on, nS20.00
t rise, nS80.00
t off, nS40.00
t fall, nS150.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC23.0
Qgc,nC8.0
Qge,nC4.0
t rr,nS
Qrr, nC
Возможные корпусаTO-220FL
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJP30H1DPP-M0 Datasheet Renesas (NEC, Hitachi)