Справочник по IGBT транзисторам. Datasheet на транзистор RJP30H2DPK-M0


ТранзисторRJP30H2DPK-M0
ТипSingle
Vce, V360.0
Vge,V30.0
Ic, A35.000
Ic max, A250.0
P, W60.000
t min,C-55
t max,C150
Rth,C2.08
Vce sat. V1.40
Cies,pF1200.0
Coes,pF60.0
Cres,pF30.0
t on, nS20.00
t rise, nS100.00
t off, nS60.00
t fall, nS180.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC37.0
Qgc,nC10.0
Qge,nC6.0
t rr,nS
Qrr, nC
Возможные корпусаTO-3PSG
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJP30H2DPK-M0 Datasheet Renesas (NEC, Hitachi)