Справочник по IGBT транзисторам. Datasheet на транзистор RJH1CV6DPQ-E0


ТранзисторRJH1CV6DPQ-E0
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A60.000
Ic max, A90.0
P, W290.000
t min,C-55
t max,C150
Rth,C0.43
Vce sat. V1.80
Cies,pF1600.0
Coes,pF85.0
Cres,pF43.0
t on, nS46.00
t rise, nS33.00
t off, nS125.00
t fall, nS120.00
Eon,mJ2.300
Eoff,mJ1.700
Etot,mJ4.000
Qg, nC105.0
Qgc,nC55.0
Qge,nC14.0
t rr,nS180.0
Qrr, nC630.00
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1CV6DPQ-E0 Datasheet Renesas (NEC, Hitachi)