Справочник по IGBT транзисторам. Datasheet на транзистор RJH1CV7DPQ-E0


ТранзисторRJH1CV7DPQ-E0
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A70.000
Ic max, A105.0
P, W320.000
t min,C-55
t max,C150
Rth,C0.39
Vce sat. V1.80
Cies,pF2075.0
Coes,pF100.0
Cres,pF55.0
t on, nS53.00
t rise, nS45.00
t off, nS185.00
t fall, nS280.00
Eon,mJ3.200
Eoff,mJ2.500
Etot,mJ5.700
Qg, nC166.0
Qgc,nC95.0
Qge,nC20.0
t rr,nS200.0
Qrr, nC700.00
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1CV7DPQ-E0 Datasheet Renesas (NEC, Hitachi)