Справочник по IGBT транзисторам. Datasheet на транзистор RJH1CM7DPQ-E0


ТранзисторRJH1CM7DPQ-E0
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A50.000
Ic max, A100.0
P, W328.900
t min,C-55
t max,C150
Rth,C0.39
Vce sat. V2.10
Cies,pF2000.0
Coes,pF100.0
Cres,pF55.0
t on, nS50.00
t rise, nS28.00
t off, nS165.00
t fall, nS105.00
Eon,mJ2.300
Eoff,mJ1.300
Etot,mJ3.600
Qg, nC140.0
Qgc,nC75.0
Qge,nC18.0
t rr,nS170.0
Qrr, nC620.00
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1CM7DPQ-E0 Datasheet Renesas (NEC, Hitachi)