Справочник по IGBT транзисторам. Datasheet на транзистор RJH1CM6DPQ-E0


ТранзисторRJH1CM6DPQ-E0
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A40.000
Ic max, A80.0
P, W297.600
t min,C-55
t max,C150
Rth,C0.43
Vce sat. V2.10
Cies,pF1600.0
Coes,pF85.0
Cres,pF45.0
t on, nS45.00
t rise, nS21.00
t off, nS120.00
t fall, nS130.00
Eon,mJ1.800
Eoff,mJ0.900
Etot,mJ2.700
Qg, nC100.0
Qgc,nC51.0
Qge,nC17.5
t rr,nS180.0
Qrr, nC620.00
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1CM6DPQ-E0 Datasheet Renesas (NEC, Hitachi)