Справочник по IGBT транзисторам. Datasheet на транзистор RJH1CD7DPQ-E0


ТранзисторRJH1CD7DPQ-E0
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A60.000
Ic max, A90.0
P, W328.900
t min,C-55
t max,C150
Rth,C0.39
Vce sat. V1.80
Cies,pF2000.0
Coes,pF70.0
Cres,pF45.0
t on, nS50.00
t rise, nS30.00
t off, nS180.00
t fall, nS240.00
Eon,mJ2.500
Eoff,mJ2.000
Etot,mJ4.500
Qg, nC133.0
Qgc,nC66.0
Qge,nC18.0
t rr,nS180.0
Qrr, nC630.00
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1CD7DPQ-E0 Datasheet Renesas (NEC, Hitachi)