Справочник по IGBT транзисторам. Datasheet на транзистор RJH1CD6DPQ-E0


ТранзисторRJH1CD6DPQ-E0
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A50.000
Ic max, A75.0
P, W290.000
t min,C-55
t max,C150
Rth,C0.43
Vce sat. V2.00
Cies,pF1600.0
Coes,pF90.0
Cres,pF45.0
t on, nS45.00
t rise, nS27.00
t off, nS130.00
t fall, nS160.00
Eon,mJ2.000
Eoff,mJ1.500
Etot,mJ3.500
Qg, nC104.0
Qgc,nC13.0
Qge,nC50.0
t rr,nS170.0
Qrr, nC620.00
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1CD6DPQ-E0 Datasheet Renesas (NEC, Hitachi)