Справочник по IGBT транзисторам. Datasheet на транзистор RJH1CV5DPQ-E0


ТранзисторRJH1CV5DPQ-E0
ТипSingle
Vce, V1200.0
Vge,V30.0
Ic, A50.000
Ic max, A75.0
P, W245.000
t min,C-55
t max,C150
Rth,C0.51
Vce sat. V1.80
Cies,pF1150.0
Coes,pF70.0
Cres,pF30.0
t on, nS42.00
t rise, nS24.00
t off, nS105.00
t fall, nS165.00
Eon,mJ1.900
Eoff,mJ1.500
Etot,mJ3.400
Qg, nC72.0
Qgc,nC40.0
Qge,nC8.0
t rr,nS170.0
Qrr, nC620.00
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1CV5DPQ-E0 Datasheet Renesas (NEC, Hitachi)