Справочник по IGBT транзисторам. Datasheet на транзистор RJH60M1DPE


ТранзисторRJH60M1DPE
ТипSingle
Vce, V600.0
Vge,V30.0
Ic, A16.000
Ic max, A20.0
P, W52.000
t min,C-55
t max,C150
Rth,C2.38
Vce sat. V1.90
Cies,pF275.0
Coes,pF25.0
Cres,pF10.0
t on, nS30.00
t rise, nS12.00
t off, nS55.00
t fall, nS70.00
Eon,mJ0.080
Eoff,mJ0.090
Etot,mJ0.170
Qg, nC20.5
Qgc,nC11.5
Qge,nC3.0
t rr,nS100.0
Qrr, nC180.00
Возможные корпуса
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH60M1DPE Datasheet Renesas (NEC, Hitachi)