Справочник по IGBT транзисторам. Datasheet на транзистор RJH1DF7RDPQ-80


ТранзисторRJH1DF7RDPQ-80
ТипSingle
Vce, V1350.0
Vge,V30.0
Ic, A60.000
Ic max, A100.0
P, W250.000
t min,C-55
t max,C150
Rth,C0.50
Vce sat. V1.95
Cies,pF3330.0
Coes,pF62.0
Cres,pF50.0
t on, nS58.00
t rise, nS78.00
t off, nS144.00
t fall, nS208.00
Eon,mJ
Eoff,mJ
Etot,mJ
Qg, nC
Qgc,nC
Qge,nC
t rr,nS
Qrr, nC
Возможные корпусаTO-247
Производитель
  • Renesas (NEC, Hitachi) (http://ru.renesas.com)
RJH1DF7RDPQ-80 Datasheet Renesas (NEC, Hitachi)