Справочник по IGBT транзисторам. Datasheet на транзистор MMIX1G320N60B3


ТранзисторMMIX1G320N60B3
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A400.000
Ic max, A1000.0
P, W1000.000
t min,C-55
t max,C150
Rth,C0.13
Vce sat. V1.20
Cies,pF18000.0
Coes,pF960.0
Cres,pF130.0
t on, nS44.00
t rise, nS66.00
t off, nS250.00
t fall, nS165.00
Eon,mJ2.700
Eoff,mJ3.500
Etot,mJ
Qg, nC585.0
Qgc,nC215.0
Qge,nC105.0
t rr,nS
Qrr, nC
Возможные корпусаSMPD
Производитель
  • IXYS (http://www.ixyspower.com)
MMIX1G320N60B3 Datasheet IXYS