Справочник по IGBT транзисторам. Datasheet на транзистор 100MT060WDF


Транзистор100MT060WDF
ТипHalf bridge
Vce, V600.0
Vge,V20.0
Ic, A83.000
Ic max, A1.9
P, W462.000
t min,C-40
t max,C150
Rth,C0.27
Vce sat. V1.98
Cies,pF9500.0
Coes,pF780.0
Cres,pF120.0
t on, nS240.00
t rise, nS47.00
t off, nS240.00
t fall, nS66.00
Eon,mJ0.200
Eoff,mJ0.960
Etot,mJ1.160
Qg, nC460.0
Qgc,nC70.0
Qge,nC160.0
t rr,nS120.0
Qrr, nC
Возможные корпусаMTP
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
100MT060WDF Datasheet Vishay (Siliconix,General Semiconductor)