Справочник по IGBT транзисторам. Datasheet на транзистор CPV363M4KPBF


ТранзисторCPV363M4KPBF
Тип3 phase bridge
Vce, V600.0
Vge,V20.0
Ic, A11.000
Ic max, A22.0
P, W36.000
t min,C-40
t max,C150
Rth,C3.50
Vce sat. V1.72
Cies,pF740.0
Coes,pF100.0
Cres,pF9.3
t on, nS55.00
t rise, nS24.00
t off, nS107.00
t fall, nS92.00
Eon,mJ0.280
Eoff,mJ0.100
Etot,mJ0.390
Qg, nC61.0
Qgc,nC27.0
Qge,nC7.4
t rr,nS42.0
Qrr, nC80.00
Возможные корпусаSIP
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
CPV363M4KPBF Datasheet Vishay (Siliconix,General Semiconductor)