Справочник по IGBT транзисторам. Datasheet на транзистор CPV363M4UPBF


ТранзисторCPV363M4UPBF
Тип3 phase bridge
Vce, V600.0
Vge,V20.0
Ic, A6.800
Ic max, A40.0
P, W36.000
t min,C-40
t max,C150
Rth,C3.50
Vce sat. V1.70
Cies,pF1100.0
Coes,pF73.0
Cres,pF14.0
t on, nS43.00
t rise, nS14.00
t off, nS95.00
t fall, nS83.00
Eon,mJ0.170
Eoff,mJ0.150
Etot,mJ0.320
Qg, nC53.0
Qgc,nC21.0
Qge,nC7.7
t rr,nS42.0
Qrr, nC80.00
Возможные корпусаSIP
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
CPV363M4UPBF Datasheet Vishay (Siliconix,General Semiconductor)