Справочник по IGBT транзисторам. Datasheet на транзистор GA200HS60S1PBF


ТранзисторGA200HS60S1PBF
ТипHalf bridge
Vce, V600.0
Vge,V20.0
Ic, A480.000
Ic max, A800.0
P, W830.000
t min,C-40
t max,C150
Rth,C0.15
Vce sat. V1.13
Cies,pF32500.0
Coes,pF2080.0
Cres,pF380.0
t on, nS
t rise, nS
t off, nS
t fall, nS
Eon,mJ30.000
Eoff,mJ50.000
Etot,mJ80.000
Qg, nC1600.0
Qgc,nC260.0
Qge,nC580.0
t rr,nS
Qrr, nC
Возможные корпусаINT-A-Pak
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GA200HS60S1PBF Datasheet Vishay (Siliconix,General Semiconductor)