Справочник по IGBT транзисторам. Datasheet на транзистор GA200SA60SP


ТранзисторGA200SA60SP
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A342.000
Ic max, A400.0
P, W781.000
t min,C-55
t max,C150
Rth,C0.16
Vce sat. V1.33
Cies,pF16250.0
Coes,pF1040.0
Cres,pF190.0
t on, nS78.00
t rise, nS56.00
t off, nS890.00
t fall, nS390.00
Eon,mJ0.980
Eoff,mJ17.400
Etot,mJ18.400
Qg, nC770.0
Qgc,nC260.0
Qge,nC100.0
t rr,nS
Qrr, nC
Возможные корпусаSOT-227
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GA200SA60SP Datasheet Vishay (Siliconix,General Semiconductor)