Справочник по IGBT транзисторам. Datasheet на транзистор GA200TS60UPBF


ТранзисторGA200TS60UPBF
ТипHalf bridge
Vce, V600.0
Vge,V20.0
Ic, A200.000
Ic max, A400.0
P, W625.000
t min,C-40
t max,C150
Rth,C0.20
Vce sat. V1.79
Cies,pF20068.0
Coes,pF1254.0
Cres,pF261.0
t on, nS342.00
t rise, nS194.00
t off, nS366.00
t fall, nS213.00
Eon,mJ5.000
Eoff,mJ16.000
Etot,mJ21.000
Qg, nC900.0
Qgc,nC306.0
Qge,nC125.0
t rr,nS179.0
Qrr, nC10714.00
Возможные корпусаINT-A-Pak
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GA200TS60UPBF Datasheet Vishay (Siliconix,General Semiconductor)