Справочник по IGBT транзисторам. Datasheet на транзистор GA400TD60S


ТранзисторGA400TD60S
ТипHalf bridge
Vce, V600.0
Vge,V20.0
Ic, A750.000
Ic max, A1000.0
P, W1563.000
t min,C-40
t max,C150
Rth,C0.08
Vce sat. V1.24
Cies,pF
Coes,pF
Cres,pF
t on, nS532.00
t rise, nS377.00
t off, nS496.00
t fall, nS1303.00
Eon,mJ8.500
Eoff,mJ113.000
Etot,mJ121.500
Qg, nC
Qgc,nC
Qge,nC
t rr,nS150.0
Qrr, nC3.90
Возможные корпуса
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GA400TD60S Datasheet Vishay (Siliconix,General Semiconductor)