Справочник по IGBT транзисторам. Datasheet на транзистор GB100DA60UP


ТранзисторGB100DA60UP
ТипSingle
Vce, V600.0
Vge,V20.0
Ic, A85.000
Ic max, A300.0
P, W447.000
t min,C-40
t max,C150
Rth,C0.28
Vce sat. V2.40
Cies,pF
Coes,pF
Cres,pF
t on, nS264.00
t rise, nS54.00
t off, nS257.00
t fall, nS80.00
Eon,mJ0.360
Eoff,mJ1.420
Etot,mJ1.780
Qg, nC460.0
Qgc,nC70.0
Qge,nC160.0
t rr,nS95.0
Qrr, nC480.00
Возможные корпусаSOT-227
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GB100DA60UP Datasheet Vishay (Siliconix,General Semiconductor)