Справочник по IGBT транзисторам. Datasheet на транзистор GB100TS60NPBF


ТранзисторGB100TS60NPBF
ТипHalf bridge
Vce, V600.0
Vge,V20.0
Ic, A74.000
Ic max, A200.0
P, W390.000
t min,C-40
t max,C150
Rth,C0.23
Vce sat. V2.60
Cies,pF
Coes,pF
Cres,pF
t on, nS197.00
t rise, nS50.00
t off, nS225.00
t fall, nS72.00
Eon,mJ0.600
Eoff,mJ1.100
Etot,mJ1.700
Qg, nC
Qgc,nC
Qge,nC
t rr,nS116.0
Qrr, nC600.00
Возможные корпусаINT-A-Pak
Производитель
  • Vishay (Siliconix,General Semiconductor) (http://www.vishay.com)
GB100TS60NPBF Datasheet Vishay (Siliconix,General Semiconductor)